Irf530n data sheet

Same catergory: BLU20-12: .N-P-N silicon planar epitaxial transistor primarily intended for use in mobile radio transmitters in the 470 MHz communications band. multi-base structure and emitter-ballasting resistors for an optimum temperature profile gold metallization ensures excellent reliability. internal matching to achieve an optimum wideband capability and high power gain.

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IRF530N. Overview. 100V Single N-Channel HEXFET Power MOSFET in a TO-220AB package. Benefits. Planar cell structure for wide SOA; Optimized for broadest availability ... 电子元件查询网查出的irf530n资料有irf530n pdf和irf530n datasheet,有多个芯片厂家的清晰datasheet资料,方便工程师快速阅读。

IRL530N Fig 7. Typical Source-Drain Diode Forward Voltage Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Fig 8. Maximum Safe Operating Area Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage 0 3 6 9 12 15 0 10 2030 4050 Q , Total Gate CharG ge (nC) V , Gate-to-Source Voltage (V) GS V = 80V V = 50V V = 20V DS DS DS A FOR TEST CIRCUIT IRF530N2www.irf.comSDGParameterMin. Typ. Max. UnitsConditionsIS datasheet search, datasheets, Datasheet search site for Electronic Components and Semiconductors ... IRF530N datasheet, IRF530N datasheets, IRF530N pdf, IRF530N circuit : PHILIPS - N-channel TrenchMOS transistor ,alldatasheet, datasheet, Datasheet search site for Electronic Components and Semiconductors, integrated circuits, diodes, triacs, and other semiconductors. alldatasheet.com is Free datasheet search site. You can use All semiconductor datasheet in Alldatasheet, by No Fee and No register. If you have any questions about using to our site, please contact [email protected] . We always welcome to your contact.